周广东 “含弘”研究员、教授、博士生导师
主要从事后摩尔时代的神经形态计算系统的底层核心器件理论、机理、工艺、集成、电路系统及算法研究，完善和发现了忆阻器中阻变突触状态的演化过程，开发了多种新型存算融合器件。近5年，主研/主持国家自然基金委重点项目(258万)、西南大学人才引进项目(300万)，重点项目子课题(100万)，博士后创新人才支持计划(60万)，智能器件测试系统-横向课题(125万)以及省级自然科学基金等十余项。在底层核心器件、理论、工艺方面的研究成果发表在Advanced Science，Nano Letters，Nano Energy，Materials Horizons，Advanced Electronic Materials，Materials Today Physics, Journal of Physical Chemistry Letters，ACS Nano，Applied Physics Letters，IEEE Transactions on Circuits and Systems，《中科科学》，《电子信息学报》等期刊上，共计SCI论文70余篇，第一作者(通讯作者) 30余篇，其中5篇文章入选ESI 1%高被引论文榜。总引次数1700次，H指数24，i10指数47。
欢迎电子信息、集成电路、材料物理、凝聚态物理、计算机科学与技术、人工智能等相关专业的学生报考硕士、博士。
教育经历
2018.06–2020.07，西南大学，数学与统计学院，智能信息处理，博士后
2015.09–2018.06，西南大学，材料与能源学部，洁净能源科学，博士
2010.09–2013.09，西南大学，物理科学与技术学院，凝聚态物理，硕士
工作经历
2020.07-至今，西南大学，人工智能学院，“含弘”研究员、教授、博士生导师
2018.06-2020.06，西南大学，数学与统计学院，博士后
2013.09-2015.09，贵州理工学院，理学院，物理教师、辅导员、班主任
学术论文
1. Guangdong Zhou*; Bai Sun; Xiaofang Hu; Linfeng Sun; Zhuo Zou; Bo Xiao; Wuke Qiu; Bo Wu; Ji e Li; Juanjuan Han; Liping Liao; Cunyun Xu; Gang Xiao; Lihua Xiao; Shaohui Zheng; Lidan Wang; Qun liang Song*; Shukai Duan*; Negative photoconductance effect: an extension function of the TiOx-based memristor, Advanced Science, 2021, 8, 2003765. IF=16.8 引用22次https://doi.org/10.1002/advs.202003765
2. Guangdong Zhou; Zhijun Ren; Bai Sun; Jinggao Wu; Zhuo Zou; Shaohui Zheng; Lidan Wang; Shu kai Duan*; Qunliang Song*; Capacitive effect: An original of the resistive switching memory, Nano Energy, 2020, 68, 104386. IF=17.88 ESI 1% 高被引, 作为智能芯片领域全球核心论文，被列入2020年中国工程院发布的《全球工程前沿2020》报告 （中国3家单位入选，一共9篇文章）本工作为西南大学3篇代表作中的一篇。 当前引用67次.https://doi.org/10.1016/j.nanoen.2019.104386
3. Guangdong Zhou; Zhijun Ren; Lidan Wang; Bai Sun; Shukai Duan*; Qunliang Song*; Artificial and wearable albumen protein memristor arrays with integrated memory logic gate functionality, Materials Horizons, 2019, 6, 1877-1882. IF=14.35 引用76次. 期刊2019年度最受欢迎文章，获首届川渝学术论文二等奖。https://doi.org/10.1039/C9MH00468H
4. Guangdong Zhou; Zhijun Ren; Lidan Wang; Jinggao Wu; Bai Sun; Ankun Zhou; Shaohui Zheng; Shukai Duan*; Qunliang Song*; Resistive switching memory integrated with amorphous carbon-based nanogenerators for self-powered device, Nano Energy, 2019, 63，103793. IF=17.88 引用77次.https://doi.org/10.1016/j.nanoen.2019.05.079
5. Guangdong Zhou; Shukai Duan; Ping Li; Bai Sun; Bo Wu; Yanqing Yao; Xiude Yang; Juanjuan H an; Gang Wang; Liping Liao; Cunyan Lin; Wei Hu; Cunyun Xu; Debei Liu; Tian Chen; Lijia Chen; Ankun Zhou; Qunliang Song*; Coexistence of Negative Differential Resistance and Resistive Switching M emory at Room Temperature in TiOx Modulated by Moisture, Advanced Electronic Materials, 2018, 4，1 700567. IF= 7.29 ESI 1% 高被引 引用107次. https://doi.org/10.1002/aelm.201700567
6. Guangdong Zhou*; Zhongrui Wang; Bai Sun; Feichi Zhou; Linfeng Sun; Shukai Duan* ; Volatile and nonvolatile memristive devices for neuromorphic computing, Advanced Electronic Materials, 2022, 2101127，IF= 7.29https://doi.org/10.1002/aelm.202101127
7. Xiaofang Hu; Wenhua Wang; Bai Sun; Yucheng Wang; Jie Li; Guangdong Zhou*; Refining the negative differential resistance effect in a TiOx-based memristor, Journal of Physical Chemistry L etters , 2021, 12(22): 5377-5383. IF= 6.48 当前引用10次，邀请文章，封面文章https://doi.org/10.1021/acs.jpclett.1c01420
8. Guangdong Zhou*， Bai Sun, Zhijun Ren,Lidan Wang, Cunyun Xu, Bo Wu, Ping Li, Yanqing Yao and Shukai Duan*， Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture ，Chemical Communications, 2019, 55, 9915-9918. IF= 6.22 当前引用32次，封面文章 https://doi.org/10.1039/C9CC04069B
9. Guangdong Zhou, Jinggao Wu, Lidan Wang, Bai Sun, Zhijun Ren, Cunyun Xu, Yanqing Yao, Liping Liao, Gang Wang, Shaohui Zheng, Pinaki Mazumder, Shukai Duan* and Qunliang Song*, Evolution map of the memristor: from pure capacitive state to resistive switching state, Nanoscale, 2019, 11, 17222-17229. IF= 7.23 当前引用28次.https://doi.org/10.1039/C9NR05550A
10. Guangdong Zhou*, Xiude Yang, Lihua Xiao, Bai Sun, and Ankun Zhou, Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory, Applied Physics Letters, 2019, 114, 163506. IF= 3.57 ESI 1% 高被引. 当前引用62次. https://doi.org/10.1063/1.5089147
11. Guangdong Zhou, Bai Sun, Yanqing Yao, Huihui Zhang, Ankun Zhou, Kamal Alameh, Baofu Ding and Qunliang Song*, Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires, Applied Physics Letters, 2016, 109, 143904. IF= 3.57 ESI 1% 高被引. 当前引用81次 https://doi.org/10.1063/1.4962655
12. Guangdong Zhou*, Bo Wu, Xiaoqin Liu, Ping Li, Shuangju Zhang, Bai Sun and Ankun Zhou, Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix, Phys. Chem. Chem. Phys., 2016, 18, 6509. IF= 4.92 当前引用24次https://doi.org/10.1039/C5CP07650A
13. Zhijun Ren, Guangdong Zhou,* Multilevel resistive switching memory behaviors arising from ion diffusion and photoelectron transfer in a-Fe2O3 nano-island arrays, Phys. Chem. Chem. Phys. 2020, 22, 2743-2747. IF= 3.57 当前引用6次https://doi.org/10.1039/C9CP06392G
14. Guangdong Zhou, Yanqing Yao, Zhisong Lu, Xiude Yang, Juanjuan Han, Gang Wang, Xi Rao, Ping Li, Qian Liu, Qunliang Song*, Hydrogen peroxide modified egg albumen for transparent and flexible resistive switching memory, Nanotechnology, 2017,28,425202. IF= 3.57 当前引用32次https://doi.org/10.1088/1361-6528/aa8397
15. Guangdong Zhou, Zhisong Lu, Yanqing Yao, Gang Wang, Xiude Yang, Ankun Zhou, Ping Li, Baofu Ding, Qunliang Song*, Mechanism for bipolar resistive switching memory behaviors of a self-assembled 3-demension MoS2 microsphere composed active layer, Journal of Applied Physics, 2017, 121, 155302. IF=2.1当前引用29次https://doi.org/10.1063/1.4980173
16. Guangdong Zhou*, Bai Sun, Ankun Zhou, Bo Wu, Haishen Huang, A larger nonvolatile bipolar resistive switching memory behavior fabricated using eggshells, Current Applied Physics, 2017, 17, 235-239. IF=2.1 当前引用30次https://doi.org/10.1016/j.cap.2016.09.018
17. Guangdong Zhou*, Bo Wu, Zhiling Li, Zhijun Xiao, Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices, Current Applied Physics, 2015, 15, 279-284. IF=2.1 当前引用21次https://doi.org/10.1016/j.cap.2014.12.024
18. Guangdong Zhou*, Bo Wu, Zhiling Li, Zhijun Xiao, Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices, Current Applied Physics, 2015, 15, 279-284. IF=2.1 当前引用21次https://doi.org/10.1016/j.cap.2014.12.024
19. Guangdong Zhou*, Wenxi Zhao, Xiaoqing Ma, Ankun Zhou, Current-voltage hysteresis of the composite MoS2-MoOx<3 nanobelts for data storage, Journal of Alloys and Compounds, 2016, 679, 47-53. IF=5.1 当前引用15次https://doi.org/10.1016/j.jallcom.2016.03.258
20. Guangdong Zhou*, Lihua Xiao , Shuangju Zhang , Bo Wu, Xiaoqin Liu, Ankun Zhou, Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory, Journal of Alloys and Compounds, 2017, 722, 753-759. IF=5.1 当前引用33次https://doi.org/10.1016/j.jallcom.2017.06.178
21. Xiude Yang, Zhijun Ren, Fuyan Pan, Bo Wu, Ping Li, Guangdong Zhou*，Visible light-induced resistive switching behaviors in single MnOx nanorod: Reversing between resistor and memristor, Journal of Alloys and Compounds， 2019, 802,546-552. IF=5.1当前引用6https://doi.org/10.1016/j.jallcom.2019.06.131
22. Guangdong Zhou*, Yanqing Yao, Xusheng Zhao, Xiaoqing Liu, Bai Sun and Ankun Zhou, Band gap energies for white nanosheets/yellow nanoislands/purple nanorods of CeO2, RSC Advances, 2016, 6, 59370-59374. IF=3.9 当前引用22次https://doi.org/10.1039/C6RA11553E
23. Xiu De Yang, Juan Juan Han, Gang Wang, Li Ping Liao, Cun Yun Xu, Wei Hu, Ping Li, Bo Wu, Ahmed Mourtada Elseman, Guangdong Zhou*, Robust perovskite-based triboelectric nanogenerator enhanced by broadband light and interface engineering, Journal of Materials Science 2019, 54, 9004–9016. IF=4.2 当前引用10次 https://linkspringer.53yu.com/article/10.1007/s10853-019-03351-9#article-info
24. Wenhua Wang, Guangdong Zhou* (共同一作兼通讯), Yuchen Wang,a Bai Sun,c Mengyuan Zhou,a Changxiang Fang,a Cunyun Xu,a Jun Dong,a Feng Wang, d Shukai Duan b and Qunliang Song*， An analogue memristor made of silk fibroin polymer, Journal of Chemistry Materials C 2021, 9, 14583–14588. IF=7.85 当前引用2次 https://doi.org/10.1039/D1TC03315H
25. Shouhui Zhu, Guangdong Zhou (共同一作), Weiyong Yuan, Shuangsuo Mao, Feng Yang, Guoqiang Fu, Bai Sun*, Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor, J. Colloid. Interf. Sci. 2020, 560, 565-571. IF=8.1 当前引用14次 https://doi.org/10.1016/j.jcis.2019.10.087
26. Bai Sun, Guangdong Zhou (共同一作), Guangdong Zhou, Ke Xu, Qiang Yu, and Shukai Duan, Self-Powered Memory Systems, ACS Materials Letters 2020, 2, 1669−1690. IF=10.55 当前引用8 https://doi.org/10.1021/acsmaterialslett.0c00364
27. Bai Sun , Ming Xiao, Guangdong Zhou (共同一作), Zhijun Ren, Y.N. Zhou*, Y. A. Wu, None zero-crossing current-voltage hysteresis behavior in memristive system, Materials Today Advances 2020, 6, 100056. IF=11.23 当前引用19次https://doi.org/10.1016/j.mtadv.2020.100056
28. Bai Sun , Tao Guo , Guangdong Zhou (共同一作), Shubham Ranjan , Yixuan Jiao, Lan Wei, Y. Norman Zhou *, Yimin A. Wu, Synaptic devices based neuromorphic computing applications in artificial intelligence, Materials Today Physics 2020, 75, 104938. IF=10.58 当前引用17次https://doi.org/10.1016/j.nanoen.2020.104938
29. Bai Sun, Guangdong Zhou (共同一作), Linfeng Sun, Hongbin Zhao, Yuanzheng Chen, Feng Yang, Yong Zhao and Qunliang Song*， ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing，Nanoscale Horizons, 2021, 6, 939-970. IF=12 当前引用7次https://pubsrsc.53yu.com/en/content/articlehtml/2021/nh/d1nh00292a
30. Bai Sun, Guangdong Zhou (共同一作), Tao Guo, Y. Norman Zhou, Yimin A. Wu *, Biomemristors as the next generation bioelectronics, Nano Energy 2020, 75, 104938. IF=17.88 ESI 1% 高被引, 当前引用45次.https://doi.org/10.1016/j.nanoen.2020.104938.
31. Juanjuan Han, Xiude Yang, Liping Liao, Guangdong Zhou, Gang Wang, Cunyun Xu, Wei Hu, Mbeng Elisabeth Reine Debora, Qunliang Song*, Photoinduced triboelectric polarity reversal and enhancement of a new metal/semiconductor triboelectric nanogenerator, Nano Energy, 2019,58, 331-337. IF=17.881
32. Bai Sun, Yuanzheng Chen, Ming Xiao, Guangdong Zhou, Shubham Ranjan, Wentao Hou, Xiaoli Zhu, Yong Zhao, Simon A.T. Redfern and Y. Norman Zhou*, A unified capacitive-coupled memristive model for the nonpinched current−voltage hysteresis loop, Nano Letters, 2019, 199, 6461-6465. IF=12.279
33. C.Y. Xu, W. Hu, G. Wang, L. Niu, A.M. Elseman, L. Liao, Y. Q. Yao, G. B. Xu, D. B. Liu, Guangdong Zhou, Pi Li, Qunliang Song*, Coordinated Optical Matching of a Texture Interface Made from Demixing Blended Polymers for High-Performance Inverted Perovskite Solar Cells, ACS Nano, 2020, 14, 1, 196-203. IF=13.279
34. G. Wang, L. P. Liao, A. M. Elseman, Y. Q. Yao, C. Y. Lin, W. Hu, D. B. Liu, L. B. Niu, Guangdong Zhou, P. Li, L. Chen, Q. Song*, An internally photoemitted hot carrier solar cell based on organic-inorganic perovskite, Nano Energy, 2020, 68, 104383. IF=17.881
35. B. Sun, X. Zhang, Guangdong Zhou, T Yu, S Mao, S. Zhu, A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate, J. Colloid. Interf. Sci. 2018, 520, 19-24. IF=8.5
36. B. Sun, Y. Chen, L. Tao, H. Zhao, Guangdong Zhou, Y. Zhao, Nanorod Array of SnO2 Quantum Dot Interspersed Multiphase TiO2 Heterojunctions with Highly Photocatalytic Water Splitting and Self-Rechargeable Battery-Like, ACS Applied Materials & Interfaces, 2018, 11, 2071-2081. IF=10.55
37. Y. Yao, G. Wang, L. Liao, D. Liu, Guangdong Zhou, C Xu, X. Yang and Q. L. Song, Enhancing the open circuit voltage of PEDOT: PSS-PC61BM based inverted planar mixed halide perovskite solar cells from 0.93 to 1.05 V by simply oxidizing, Organic Electronics, 2018, 59, 260-265. IF=3.5
38. B. Sun, S. Mao, S. Zhu, Guangdong Zhou, Y. Xia, Y. Zhao, Improved Rate and Cycling Performances of Electrodes Based on BiFeO3 Nanoflakes by Compositing with Organic Pectin for Advanced Rechargeable Na-Ion, ACS Applied Nano Materials, 2018, 1, 1291-1299. (IF=10).
39. X Yang, G Wang, D Liu, Y Yao, Guangdong Zhou, P Li, B Wu, Pentacene as a hole transport material for high performance planar perovskite solar cells, Current Applied Physics, 2018, 18, 1095-1100. IF=2.1
40. Y. Xia, B. Sun, H. Wang, Guangdong Zhou, X. Kan, Y. Zhang, Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film, Applied Surface Science, 2017, 426, 812-816. IF=6.1
41. X. Zhao, J. Xiang, D. Liu, D. Zhou, G. Wang, Guangdong Zhou, Q. L. Song, Impact of alkyl chain length of 1, n-diiodoalkanes on PC71BM distribution in both bulk and air surface of PTB7: PC71BM film, Organic Electronics, 2016, 37, 358-365. IF=3.551
42. B Sun, X Zhang, Guangdong Zhou, C. Zhang, P. Li, Y. Xia, Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices. J. Alloys. Compounds, 2017, 694, 464-470. IF=5.1
43. B. Sun, T Guo, Guangdong Zhou, S Ranjan, W Hou, Y Hou, Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour. J. Colloid. Interf. Sci., 2019, 553, 682-687. IF=8.5
44. S. Zhu, B. Sun, S. Ranjan, X. Zhu, Guangdong Zhou, H Zhao, Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state, APL Mater. 2019, 7, 081117. IF=4.296
45. Q. Xu, L. Xiao, J. Ran, R. Tursun, Guangdong Zhou, Cs0.33WO3 as a high-performance transparent solar radiation shielding material for windows, J. Appl. Phys. 2019, 124, 193102. IF=2.1
46. B. Wu, H. Huang, Guangdong Zhou, Y. Feng, Magnetism, and Electronic Properties of Inverse Herterojuction: Heusler The Alloy Role Ti2CoAl/MgO (100) of Interfaces. Recent Advances in Novel Materials for Future Spintronics, 2019, 89. IF=2
47. B Wu, H Huang, P Li, T Zhou, Guangdong Zhou, Y Feng, First-principles study on the structure, magnetism, and electronic properties in inverse Heusler alloy Ti2FeAl/GaAs (100) heterojunction, Superlattices and Microstructures, 2019, 133, 106205. IF=2.3
48. S. Zhu, B Sun, Y Chen, T Li, Guangdong Zhou, H Zhao, An excellent pH-controlled resistive switching memory device based on self-colored (C 7 H 7 O 4 N) n extracted from a lichen plant, J. Mater. Chem. C. 2019, 7, 7593-7600. IF=7.8
49. Y. Q. Yao, F. Lv, L. Luo, L. Liao, G. Wang, D. Liu, C. Xu, Guangdong Zhou, Highly Efficient Sn–Pb Perovskite Solar Cell and High‐Performance All‐Perovskite Four‐Terminal Tandem Solar Cell. Solar RRL, 2019, 1900396. IF=7.5
50. B. Wu, H. Huang, Guangdong Zhou, X. Yang, P. Li, Half-metallic ferrimagnets behavior of a new quaternary Heusler alloy CrCoScZ (Z= Si, Ge, Sn). The European Physical Journal B, 2019, 92(6), 119. IF=2.0
51. B Sun, X Zhang, Guangdong Zhou, P Li, Y Zhang, H Wang, An organic nonvolatile resistive switching memory device fabricated with natural pectin from fruit peel. Organic Electronics, 2017, 42, 181-186. IF=3.5
52. P Li, B. Sun, X Zhang, Guangdong Zhou, Y Xia, L Gan, Y Zhang, Effect of temperature on the magnetism and memristive memory behavior of MoSe2 nanosheets, Materials Letters., 2017, 202, 13-16. IF=3.0
53. P. Li, X De Yang, HS Huang, Guangdong Zhou, Q. L. Song, The direct observation of electron backflow in an organic heterojunction formed by two n-type materials. Phys. Chem. Chem. Phys. 20(12), 8064-8070. IF=3.5
54. X. D.Yang, Y. Hu, G. Wang, Guangdong Zhou, P. Li, B. Wu, Q.L. Song, Thermal evaporated C60 modified by Pt as counter electrode for dye-sensitized solar cells, Chem. Phys. 2018, 513, 73-77. IF=1.82
55. Y. Q. Yao, F Wu, D Liu, C Lin, X Rao, R Wu, Guangdong Zhou, Q.L. Song, The interface degradation of planar organic–inorganic perovskite solar cell traced by light beam induced current (LBIC). RSC Advances, 7(68), 42973-42978. IF=4.1
56. X Yang, J Han, F Wu, X Rao, Guangdong Zhou, C Xu, P Li, Q Song, A novel retractable spring-like-electrode triboelectric nanogenerator with highly-effective energy harvesting and conversion for sensing road conditions, RSC Advances, 7, 50993-51000. IF=4.1
57. P. Li, Y. C. Yang, H.S. Huang, X De Yang, Guangdong Zhou, QL Song, Improved charge transport ability of polymer solar cells by using NPB/MoO3 as anode buffer layer. Solar Energy, 2018, 170, 212-216. IF=5.5
58. W. Hu, C.Y. Xu, Y.Q Yao, LP Liao, Guangdong Zhou, QL Song, High Open-Circuit Voltage of 1.134 V for Inverted Planar Perovskite Solar Cells with Sodium Citrate-Doped PEDOT: PSS as a Hole Transport Layer. ACS Applied Materials & Interfaces, 2018, 11, 22021-22027. IF=10
59. Guangdong Zhou, S. Y. Zhang, Y. T. Tu, J. Li, P. Chen, J. Y. Dai, and X. Y. Qiu*, Anisotropy of Weak Ferromagnetism of HfAlOx Film Deposited by Magnetron Sputtering, Integrated Ferroelectrics, 2012, 134, 13-15. IF=0.45
60. Xiao Yan Qiu*(导师), Guangdong Zhou, J. Li, Y. Chen, X.H. Wang, J. Y. Dai, Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate, Thin Solid Films, 2014,562, 674–679. IF=1.888
61. Guangdong Zhou, X. F. Chen, Y. T. Tu, Z. J. Liu,J. Li, P. Chen, X.Y. Qiu, weak ferromagnetism of HfOx<2 thin films with atmospheric deposition and post-annealing treatment, Science of China (Physics, Mechanics and Astronomy), 2012, 42, 926-933. IF=1.03
62. Jie Li, Guangdong Zhou, Yingying Li, Jiahao Chen, Yuan Ge, Yan Mo, Yuanlei Yang, Xicong Qian, Wenwu Jiang, Hongbo Liu, Mingjian Guo, Lidan Wang, Shukai Duan*, Reduction 93.7% time and power consumption using a memristor‑based imprecise gradient update algorithm, Artificial Intelligence Review, 2022, 55(1), 657-677. IF=8.5
63. Y. Zhou, X. F. Hu. Guangdong Zhou, Lidan Wang, Shukai Duan*, Quant bayes: weight optimization for memristive neural networks via quantization-aware bayesian inference, IEEE Trans. Circuit System 2021, 68, 4851-4861. IF=3.2
科研项目
1. 西南大学人才引进项目, SWU020019, 视觉、听觉、触觉多维类脑感知芯片, 2021-04 至 2024-12, 300万元, 在研, 主持
2. 重庆盛科纳科技有限公司, 横向课题-技术研发, SKN-2022-0009, 智能信息器件多模态原位测试探针台系统, 2022-03 至 2022-10, 125万元, 在研, 主持
3. 博士后创新人才支持计划, CQBX201806, 极端环境可穿戴、高效、 绿色忆阻器的研制、 计算仿真、集成的研究, 2018-11 至 2020-08, 60万元, 结题, 主持
4. 贵州省科技厅, 贵州省自然科学基金面上项目, 黔科合基础[2020]1Y024, 界面诱导负光电导效应实现 多阻态、低功耗的可行性研究, 2020-01 至 2022-01, 10万元, 在研, 主持
5. 重庆市科技局, 重庆市自然科学基金面上项目, cstc2020jcyj-msxmX0648, 负光电导与忆阻效应共存 在低功耗类脑芯片中的应用研究, 2020-07 至 2023-06, 10万元, 在研, 主持
6. 国家自然科学基金委员会, 联合基金项目, U20A20227, 受脑启发可动态重构存算融合的类脑计算架构 , 2021-01-01 至 2024-12-31, 258万元, 主研, 参与
7. 国家自然科学基金委员会, 面上项目, 61976246, 轻量级忆阻神经形态计算系统研究与鲁棒性分析, 2 020-01-01 至 2023-12-31, 61万元, 主研, 参与
8. 国家自然科学基金委员会, 面上项目, 51776046, 新型LaB6基等离激元纳米流体的太阳能光热转换机理及其调控研究, 2018-01-01 至 2021-12-31, 62万元, 主研, 参与
9. 国家自然科学基金委员会, 应急管理项目, 61751501, 窗用WO3基近红外吸收材料透明屏蔽机理及性能 调控的第一性原理研究, 2018-01-01 至 2018-12-31, 10万元, 结题, 参与
10. 国家自然科学基金委员会, 面上项目, 11774293, 钙钛矿太阳能电池界面的原位光致发光研究, 2018- 01-01 至 2021-12-31, 65万元, 主研, 参与
专利、奖励与其他
1. 周广东; 段书凯; 王丽丹; 胡小方; 一种Fe2O3纳米材料合成以及在脑智能芯片中应用, 2019-1-18, 中国, 201910049213.6 (发明专利)
2. 周广东; 段书凯; 王丽丹; 胡小方; 一种高介电蛋清薄膜材料的制备方法以及可穿戴电子器件, 2019 -1-23, 中国, 201910059887.4 (发明专利)
3. 周广东; 任芝君; 王丽丹; 孙柏; 段书凯; 首届川渝科技学术大会论文奖, 四川省科学技术协会，重庆市科学技术协会, 科技进 步, 省部二等奖, 2020年度 (科研奖励)
4. 周广东; Co-existence of the positive/negative photoconductance in memristor for neuromor thic vision system: the key materials, devices, and algorithms （忆阻器中正负光电导共存在神经形态 视觉系统中的应用：关键材料、器件和算法）, International Congress on Optics, Electronics, and Opto electronics , 西安, 2021-11-5至2021-11-8 (会议报告)
5. 周广东; 易失性与非易失性忆阻器的物理机理和应用, 第23届全国半导体物理学术会议, 西安, 2021 -7-8至2021-7-11 (会议报告)
6. 周广东; 柔性自支撑蛋白质忆阻器智能感知芯片研究, 海峡两岸暨港澳青年科学家智能可穿戴技术创 新论坛, 苏州日航国际酒店, 2021-10-30至2021-11-3 (会议报告)
7. 周广东; 光电智能信息材料与器件, 西部材料大会, 重庆, 2021-9-24至2021-9-26 (邀请报告)
8. 周广东; 易失和非易失性忆阻器在类脑芯片中的应用, 新兴电子材料与器件物理国际研讨会, 四川省成都市四川师范大学, 2021-6-18至2021-6-21 (邀请报告）
9. 周广东;天然蚕丝蛋白柔性阻变突触器件关键技术与芯片系统， 神经形态计算、蚕学基因、行为心理与脑机接口交叉融合沙龙会议，重庆，2022-4-13至2022-4-13 (会议组办）
教学教改
教授《高等数学》、《矩阵论》、《脑科学基础》、《忆阻器件与系统》、《大学物理》、《大学物理实验》、《影视赏析》等课程，主持党建课题，2015年被评为“优秀教师”。关于物理教学方面，发表了题为“学物理中关于法拉第电磁感应定律的动生电动势教学内容思考探析”、“聚焦大学生的理想信念教育”等论文，所授的《大学物理》的混合教学模式，被《贵州日报》作为亮点报道。